Weihang Zhang - Concepedia

Author

Weihang Zhang

Xidian University ORCID

Also Known As

Wei-Hang Zhang, WeiHang Zhang, Weihang Zhang, Zhang, Wei-Hang, Zhang, Weihang

Publications

Citations

H-Index

Concepts

All Affiliations

Xidian University Chinese Academy of Sciences Beijing Technology and Business University China Electronics Technology Group Corporation University of Chinese Academy of Sciences

About

Weihang Zhang is an author at Xidian University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	23	704
2	Applied Physics	14	16	423
3	Chemical Engineering	3	3	155
4	Medicine	1	1	16
5	Biomedical Engineering	1	1	16

Weihang Zhang

Publications

888

Citations

H-Index

Page 1

	Year	Citations
Two-step ball milling-assisted synthesis of N-doped biochar loaded with ferrous sulfide for enhanced adsorptive removal of Cr(Ⅵ) and tetracycline from water Jianhua Qu, Weihang Zhang, Fuxuan Bi, Environmental Pollution Chemical EngineeringBiocharEngineeringN-doped BiocharEnvironmental Engineering	2022	66
Efficient scavenging of aqueous Pb(II)/Cd(II) by sulfide-iron decorated biochar: Performance, mechanisms and reusability exploration Bo Cao, Jianhua Qu, Yihang Yuan, Journal of environmental chemical engineering Chemical EngineeringBiocharEfficient ScavengingEngineeringBioremediation	2022	59
Structure and upconversion luminescence properties of BaYF5:Yb3+, Er3+ nanoparticles prepared by different methods Haiyan Du, Weihang Zhang, Jiayue Sun Journal of Alloys and Compounds Materials ScienceEngineeringOptical PropertiesLuminescent GlassUpconversion Luminescence Properties	2010	48
More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm<sup>2</sup> Power Figure-of-Merit Yinhe Wu, Jincheng Zhang, Shenglei Zhao, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringHigh Voltage EngineeringElectronic Engineering	2019	43
High-Performance E-Mode <i>p</i>-Channel GaN FinFET on Silicon Substrate With High <i>I</i> <sub>ON</sub>/<i>I</i> <sub>OFF</sub> and High Threshold Voltage Hanghai Du, Zhihong Liu, Lu Hao, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsHigh Threshold Voltage	2022	41
Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al<sub> <i>x</i> </sub>Ga<sub>1-<i>x</i> </sub>N Channel Shuang Liu, Jincheng Zhang, Shenglei Zhao, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	2022	40
Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V Yinhe Wu, Shuang Liu, Jincheng Zhang, IEEE Transactions on Electron Devices	2023	40
High Breakdown-Voltage (>2200 V) AlGaN-Channel HEMTs With Ohmic/Schottky Hybrid Drains Weihang Zhang, Jincheng Zhang, Ming Xiao, IEEE Journal of the Electron Devices Society Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringAlgan Channel	2018	39
Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing Chenlu Wang, Qinglong Yan, Chunxu Su, IEEE Electron Device Letters	2023	35
Synthesis and two-color emission properties of BaGd2(MoO4)4:Eu3+,Er3+,Yb3+ phosphors Jiayue Sun, Wei Zhang, Weihang Zhang, Materials Research Bulletin Inorganic ChemistryYb3+ PhosphorsEngineeringLuminescent GlassChemistry	2011	34

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