Shuang Liu

Simulation Research on Single Event Burnout Performances of p-GaN Gate HEMTs With 2DEG Al_<i>x</i>Ga_1-<i>x</i>N Channel

Shuang Liu, Jincheng Zhang, Shenglei Zhao et al. · IEEE Transactions on Electron Devices · 2022 · 40 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Yinhe Wu, Shuang Liu, Jincheng Zhang et al. · IEEE Transactions on Electron Devices · 2023 · 40 citations

AlN/GaN Superlattice Channel HEMTs on Silicon Substrate

Shuang Liu, Weihang Zhang, Jincheng Zhang et al. · IEEE Transactions on Electron Devices · 2021 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +9

TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs

Ga Zhang, Shenglei Zhao, Zhizhe Wang et al. · IEEE Transactions on Electron Devices · 2024 · 17 citations

A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics

Xiufeng Song, Baorui Sun, Jincheng Zhang et al. · Journal of Physics D Applied Physics · 2022 · 11 citations