More Than 3000 V Reverse Blocking Schottky-Drain AlGaN-Channel HEMTs With >230 MW/cm² Power Figure-of-Merit

Abstract

In this letter, more than 3000 V reverse blocking Schottky-drainAlGaN-channelHEMTs are demonstrated for the first time. By using Schottky drain technology, forward breakdown voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FB</sub> (at 10 μA/mm) is improved from 1850~2100 V to 2200~2600 V for LGD = 22μm. Due to the high breakdown electric field of AlGaN material, reverse blocking voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RB</sub> (at 10 μA/mm) reaches as high as -1950 ~ -2200 V. For HEMTs with L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> = 52μm, record high V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FB</sub> of >3000V and <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VRB</sub> of >3000V have been achieved.The leakage current is as low as 6.06 nA/mm at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = -2000 V.