M. Alam

On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

Dhanoop Varghese, Dipankar Saha, Souvik Mahapatra et al. · 2006 · 120 citations

Engineering, Electrical Engineering, Physics +17

Stress induced leakage current analysis via quantum yield experiments

A. Ghetti, M. Alam, J. Bude et al. · IEEE Transactions on Electron Devices · 2000 · 40 citations

Engineering, Electrical Engineering, Microelectronics +16

Reliability- and Process-Variation Aware Design of VLSI Circuits

M. Alam, K. Kang, Bipul C. Paul et al. · 2007 · 33 citations

Engineering, Computer Engineering, Electrical Engineering +17

Design Guidelines for Superjunction Devices in the Presence of Charge Imbalance

M. Alam, Dallas Morisette, James A. Cooper · IEEE Transactions on Electron Devices · 2018 · 29 citations

Engineering, Electrical Engineering, Materials Science +12

A computational model for oxide breakdown: theory and experiments

M. Alam, B. E. Weir, J. Bude et al. · Microelectronic Engineering · 2001 · 27 citations

Engineering, Electrical Engineering, Materials Engineering +12