Yachao Zhang

A > 3 kV/2.94 m $\Omega\cdot$ cm² and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Tao Zhang, Jinfeng Zhang, Shengrui Xu et al. · IEEE Electron Device Letters · 2019 · 66 citations

Semiconductors, Electrical Engineering, Low Leakage Current +13

High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels

Yachao Zhang, Zhizhe Wang, Rui Guo et al. · Applied Physics Letters · 2018 · 28 citations

Electrical Engineering, Electronic Devices, Engineering +11

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

Yachao Zhang, Tao Zhang, Hong Zhou et al. · Applied Physics Express · 2018 · 22 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

Yachao Zhang, Rui Guo, Shengrui Xu et al. · Applied Physics Letters · 2019 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +7

Investigation on high quality ultra-wide band gap <i>β</i>-Ga₂O₃/AlN heterostructure grown by metal organic chemical vapor deposition

Yifan Li, Yachao Zhang, Jincheng Zhang et al. · Semiconductor Science and Technology · 2022 · 16 citations