Jianguo Chen

Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si₃N₄/AlGaN/GaN MIS-HEMTs with an <i>In-Situ</i> Si₃N₄ Interfacial Layer

Hui Sun, Maojun Wang, Ruiyuan Yin et al. · IEEE Transactions on Electron Devices · 2019 · 40 citations

Wide-bandgap Semiconductor, Sub Xmlns, Engineering +21

Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process

Hui Sun, Meihua Liu, Peng Liu et al. · IEEE Transactions on Electron Devices · 2017 · 30 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Fabrication of High-Uniformity and High-Reliability Si₃N₄/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry

Hui Sun, Maojun Wang, Jianguo Chen et al. · IEEE Transactions on Electron Devices · 2018 · 21 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Elimination of Gate Leakage in GaN FETs by Placing Oxide Spacers on the Mesa Sidewalls

Peng Liu, Chuncheng Xie, Feng Zhang et al. · IEEE Electron Device Letters · 2013 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate

Hui Sun, Meihua Liu, Peng Liu et al. · Solid-State Electronics · 2017 · 17 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8