Jian Zhang

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe

Hao Yu, Marc Schaekers, Jian Zhang et al. · IEEE Transactions on Electron Devices · 2017 · 35 citations

Engineering, Materials Engineering, Materials Science +14

Evaluation of LPCVD SiN_{<italic>x</italic>} Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

Yongle Qi, Yumeng Zhu, Jian Zhang et al. · IEEE Transactions on Electron Devices · 2018 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Jian Zhang, Robert Sokolovskij, Ganhui Chen et al. · Sensors and Actuators B Chemical · 2018 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Science +12

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Robert Sokolovskij, Jian Zhang, Elina Iervolino et al. · Sensors and Actuators B Chemical · 2018 · 30 citations · Full text

Engineering, Materials Engineering, Materials Science +13

Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

Xiantong Zheng, Hongwei Liang, Ping Wang et al. · Superlattices and Microstructures · 2017 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +16