Jian Zhang

TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe

Hao Yu, Marc Schaekers, Jian Zhang et al. · IEEE Transactions on Electron Devices · 2017 · 34 citations

Sub Xmlns, Engineering, Silicon On Insulator +17

Evaluation of LPCVD SiN_{<italic>x</italic>} Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

Yongle Qi, Yumeng Zhu, Jian Zhang et al. · IEEE Transactions on Electron Devices · 2018 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si-substrate-based Algan/gan Mis-hemt +12

Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Jian Zhang, Robert Sokolovskij, Ganhui Chen et al. · Sensors and Actuators B Chemical · 2018 · 32 citations · Full text

Wide-bandgap Semiconductor, H2s Detection, Chemical Engineering +8

Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Robert Sokolovskij, Jian Zhang, Elina Iervolino et al. · Sensors and Actuators B Chemical · 2018 · 30 citations · Full text

Electrical Engineering, Chemical Engineering, Engineering +5

Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

Xiantong Zheng, Hongwei Liang, Ping Wang et al. · Superlattices and Microstructures · 2017 · 14 citations

Materials Engineering, Materials Science, Ingan Film +10