Yongle Qi

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Active since

2017

Affiliations

Southern University of Science and Technology(Current)

Fudan University

Yongle Qi is an author at Southern University of Science and Technology specializing in semiconductor device materials, engineering, and gallium nitride (gan) materials.

ORCID

Publications per year

2017–2020

Publications

Evaluation of LPCVD SiN<sub><italic>x</italic></sub> Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

Yongle Qi, Yumeng Zhu, Jian Zhang et al. · IEEE Transactions on Electron Devices · 2018 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Jian Zhang, Robert Sokolovskij, Ganhui Chen et al. · Sensors and Actuators B Chemical · 2018 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Science +12

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Ning Wang, Hui Wang, Xinpeng Lin et al. · AIP Advances · 2017 · 14 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Effect of x-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS gates

Yongle Qi, Denggui Wang, Jianjun Zhou et al. · Nanotechnology and Precision Engineering · 2020 · 10 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

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