Concepedia

Yongle Qi

YQ

3

Publications

79

Citations

3

H-Index

2017

Active since

Affiliations

Southern University of Science and Technology(Current)

Fudan University

Yongle Qi is an author at Southern University of Science and Technology specializing in electrical engineering, applied physics, and engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringMicroelectronicsHydrogenNanoelectronicsCrystalline DefectsChemical EngineeringMaterials Engineering

Publications per year

2017–2018

3

Publications

3

Evaluation of LPCVD SiN<sub><italic>x</italic></sub> Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

Yongle Qi, Yumeng Zhu, Jian Zhang et al. · IEEE Transactions on Electron Devices · 2018 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si-substrate-based Algan/gan Mis-hemt +12

Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Jian Zhang, Robert Sokolovskij, Ganhui Chen et al. · Sensors and Actuators B Chemical · 2018 · 32 citations · Full text

Wide-bandgap Semiconductor, H2s Detection, Chemical Engineering +8

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Ning Wang, Hui Wang, Xinpeng Lin et al. · AIP Advances · 2017 · 14 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14

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