Yuan Wang

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs<i/> <sub/>

Hao Wu, Xiaojun Fu, Jingwei Guo et al. · IEEE Electron Device Letters · 2022 · 31 citations

Medicine, Electrical Engineering, Radiation Dosimetry +14

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Hao Wu, Fu Xiaojun, Yuan Wang et al. · Results in Physics · 2021 · 27 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +16

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Hao Wu, Fu Xiaojun, Jingwei Guo et al. · IEEE Transactions on Electron Devices · 2022 · 26 citations

Engineering, Electrical Engineering, Materials Science +15

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

Yuan Wang, Shengdong Hu, Jingwei Guo et al. · IEEE Journal of the Electron Devices Society · 2022 · 24 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Design of a Compact RF Front-End Transceiver Module for 5G New-Radio Applications

Yuan Wang, Heng‐Tung Hsu, Arpan Desai et al. · IEEE Transactions on Instrumentation and Measurement · 2022 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16