Jingwei Guo

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

Jingwei Guo, Ping Li, Jie Jiang et al. · IEEE Transactions on Electron Devices · 2022 · 33 citations

Engineering, Electrical Engineering, Circuit Theory +16

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs<i/> <sub/>

Hao Wu, Xiaojun Fu, Jingwei Guo et al. · IEEE Electron Device Letters · 2022 · 31 citations

Medicine, Electrical Engineering, Radiation Dosimetry +14

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Hao Wu, Fu Xiaojun, Yuan Wang et al. · Results in Physics · 2021 · 27 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +16

A Low-Reverse-Recovery-Charge Superjunction MOSFET With P-Base and N-Pillar Schottky Contacts

Ping Li, Jingwei Guo, Zhi Lin et al. · IEEE Transactions on Electron Devices · 2020 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Hao Wu, Fu Xiaojun, Jingwei Guo et al. · IEEE Transactions on Electron Devices · 2022 · 26 citations

Engineering, Electrical Engineering, Materials Science +15