Yingkui Zheng

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Sen Huang, Xinyu Liu, Xinhua Wang et al. · IEEE Electron Device Letters · 2016 · 99 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

Xinhua Wang, Sen Huang, Yingkui Zheng et al. · IEEE Transactions on Electron Devices · 2014 · 87 citations

Composite Algan/gan Buffer, Electron Capture Probability, Electrical Engineering +12

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

Jinhan Zhang, Sen Huang, Qilong Bao et al. · Applied Physics Letters · 2015 · 65 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +18

Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

Yichuan Zhang, Sen Huang, Wei Ke et al. · IEEE Electron Device Letters · 2020 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking

Xuanwu Kang, Xinhua Wang, Sen Huang et al. · 2018 · 40 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14