R. Wunder

High-gain, high-frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the base

R. J. Malik, Federico Capasso, R. A. Stall et al. · Applied Physics Letters · 1985 · 42 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Photoluminescence characterization of molecular beam epitaxy grown In<i>x</i>Ga1−<i>x</i>As(0.51&amp;lt;<i>x</i>&amp;lt;0.57)

V. Swaminathan, R. A. Stall, A. T. Macrander et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 23 citations

Engineering, Materials Engineering, Materials Science +17

Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy

R. A. Stall, R. Wunder, V. Swaminathan et al. · Applied Physics Letters · 1985 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structural and electrical properties of lattice-matched Ca0.44Sr0.56F2/GaAs structures grown by molecular beam epitaxy

C. W. Tu, S. J. Wang, J. M. Phillips et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 17 citations

Natural Sciences, Materials Science, Physics +17

Self-aligned In_0.53Ga_0.47As/semi-insulating/n⁺InP junction field-effect transistors

Jin Cheng, R. A. Stall, Stephen R. Forrest et al. · IEEE Electron Device Letters · 1985 · 14 citations

Engineering, Electrical Engineering, Materials Science +17