Wakeup-Free and Endurance-Robust Ferroelectric Field-Effect Transistor Memory Using High Pressure Annealing

Manh-Cuong Nguyen, Sihyun Kim, Kitae Lee, +3

IEEE Electron Device Letters

Materials EngineeringMaterials ScienceElectrical EngineeringMagnetic PropertiesEngineering +13

Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

Wonjun Shin, Kyung Kyu Min, Jong‐Ho Bae, +2

Nanoscale

Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization

Wonjun Shin, Jiyong Yim, Jong‐Ho Bae, +1

Materials Horizons

EngineeringGas SensorDownward PolarizationChemistryChemical Engineering +14

Ferroelectric Field-Effect Transistors for Binary Neural Network With 3-D NAND Architecture

Geun Ho Lee, Min Song, Sangwoo Kim, +5

IEEE Transactions on Electron Devices

EngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryFefet DeviceNanocomputing +18

Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2

Changhyeon Han, Ki Ryun Kwon, Jeonghan Kim, +7

Materials Science in Semiconductor Processing

Materials ScienceMaterials EngineeringOxygen VacanciesEngineeringRf Semiconductor +4

All-Sputter-Deposited Hf_0.5Zr_0.5O₂ Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium–Gallium–Zinc Oxide Channel

Soi Jeong, Changhyeon Han, Jiyong Yim, +7

IEEE Electron Device Letters

Materials ScienceTop Conventional TftElectrical EngineeringAmorphous Indium–gallium–zinc OxideEngineering +10

Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Anh-Duy Nguyen, +6

Nano Convergence

Materials ScienceChemical EngineeringFerroelasticsEngineeringZirconium Hafnium Oxide +13

Effects of RTA Rising Time on Ferroelectric Characteristics of HfZrO₂

Changhyeon Han, Seok Jin Kwon, Jiyong Yim, +7

IEEE Transactions on Electron Devices

Materials ScienceMagnetismFerromagnetismMultiferroicsMagnetic Properties +13

Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer

Sangwoo Kim, Wonjun Shin, Munhyeon Kim, +10

IEEE Electron Device Letters

Polarization Pruning: Reliability Enhancement of Hafnia‐Based Ferroelectric Devices for Memory and Neuromorphic Computing

Ryun‐Han Koo, Wonjun Shin, Jangsaeng Kim, +9

Advanced Science