T. Iizuka

NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation

N. Kimizuka, Keiko Yamaguchi, K. Imai et al. · 2002 · 139 citations

Engineering, Ultrathin Gate Oxide, Nitrogen Incorporation +16

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

M. Miura–Mattausch, N. Sadachika, D. Navarro et al. · IEEE Transactions on Electron Devices · 2006 · 110 citations

Engineering, Surface Potentials, Channel Surface Potential +16

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon

A. Abramo, L. Baudry, R. Brunetti et al. · IEEE Transactions on Electron Devices · 1994 · 69 citations

Engineering, Charge Transport, Electron Physic +21

The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETs

Hans Jürgen Mattausch, M. Miyake, T. Iizuka et al. · IEEE Transactions on Electron Devices · 2012 · 52 citations

Device Modeling, Internal Node Potential, Electrical Engineering +12

Determination of threshold energy for hot electron interface state generation

J. Bude, T. Iizuka, Yoshinari Kamakura · 2002 · 29 citations

Engineering, Semiconductor Device, Radiation Generation +18