V. P. Kesan

Surface-stress-induced order in SiGe alloy films

F. K. LeGoues, V. P. Kesan, Subramanian S. Iyer et al. · Physical Review Letters · 1990 · 155 citations

Materials Science, Engineering, Physics +12

A VLSI-compatible high-speed silicon photodetector for optical data link applications

Massimo Ghioni, Franco Zappa, V. P. Kesan et al. · IEEE Transactions on Electron Devices · 1996 · 96 citations

Optical Materials, Engineering, Optical Transmission System +17

Interfacial reactions and Schottky barriers of Pt and Pd on epitaxial Si1−<i>x</i>Ge<i>x</i> alloys

H. K. Liou, Xiangdong Wu, U. Gennser et al. · Applied Physics Letters · 1992 · 92 citations

Materials Engineering, Semiconductors, Materials Science +15

Diffusion versus oxidation rates in silicon-germanium alloys

John Eugene, F. K. LeGoues, V. P. Kesan et al. · Applied Physics Letters · 1991 · 91 citations

Materials Science, Materials Engineering, Engineering +11

A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

Subramanian S. Iyer, P. M. Solomon, V. P. Kesan et al. · IEEE Electron Device Letters · 1991 · 89 citations

Materials Engineering, High-quality Dielectric System, Electrical Engineering +13