Johannes Thalmair

Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre‐structured r‐plane sapphire substrates

Stephan Schwaiger, Sebastian Metzner, Thomas Wunderer et al. · physica status solidi (b) · 2010 · 35 citations

Engineering, Materials Engineering, Materials Science +17

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

H. Jönen, U. Rossów, H. Bremers et al. · Applied Physics Letters · 2011 · 26 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of indium incorporation in non- and semipolar GaInN QW structures: comparing x-ray diffraction and optical properties

H. Jönen, H. Bremers, U. Rossów et al. · Semiconductor Science and Technology · 2012 · 18 citations

Engineering, Materials Science, Physics +17

X‐ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

H. Bremers, Alexander Schwiegel, Lars Hoffmann et al. · physica status solidi (b) · 2010 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +15

Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

H. Jönen, U. Rossów, H. Bremers et al. · physica status solidi (b) · 2010 · 15 citations

Engineering, Materials Science, Physics +17