Félix Palumbo

Dielectric breakdown mechanisms in gate oxides

S. Lombardo, J. H. Stathis, B.P. Linder et al. · Journal of Applied Physics · 2005 · 427 citations

Electrical Engineering, Engineering, Physics +13

Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient

Chih Hang Tung, K. L. Pey, Lei Tang et al. · Applied Physics Letters · 2003 · 102 citations

Materials Engineering, Electrical Engineering, Semiconductor Device +14

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride

Lanlan Jiang, Yuanyuan Shi, Fei Hui et al. · ACS Applied Materials & Interfaces · 2017 · 59 citations

Continuous High-Altitude Measurements of Cosmic Ray Neutrons and SEU/MCU at Various Locations: Correlation and Analyses Based-On MUSCA SEP$^{3}$

G. Hubert, Raoul Velazco, Cláudio Antonio Federico et al. · IEEE Transactions on Nuclear Science · 2013 · 44 citations

Engineering, Nuclear Physics, Space Environment +19

150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors

Bin Yuan, Xianhu Liang, Liubiao Zhong et al. · Advanced Electronic Materials · 2020 · 41 citations

Engineering, Emerging Memory Technology, Two-dimensional Materials +17