T. Egilsson

Pseudodonor nature of the DI defect in 4H-SiC

L. Storasta, Fredrik Carlsson, S.G. Sridhara et al. · Applied Physics Letters · 2001 · 92 citations

Natural Sciences, Materials Science, Physics +17

The material quality of CVD-grown SiC using different carbon precursors

C. Hallin, Ivan G. Ivanov, T. Egilsson et al. · Journal of Crystal Growth · 1998 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +8

Resonant sharp hot free-exciton luminescence in 6H- and 4H-SiC due to inhibited exciton-phonon interaction

Ivan G. Ivanov, T. Egilsson, Anne Henry et al. · Physical review. B, Condensed matter · 2001 · 11 citations

Natural Sciences, Materials Engineering, Materials Science +16

A method for the assessment of oxide charge density and centroid in metal-oxide-semiconductor structures after uniform gate stress

R. Kies, T. Egilsson, G. Ghibaudo et al. · Applied Physics Letters · 1996 · 11 citations

Engineering, Electrical Engineering, Materials Science +17

High quality 4H-SiC grown on various substrate orientations

Anne Henry, Ivan G. Ivanov, T. Egilsson et al. · Diamond and Related Materials · 1997 · 10 citations

Engineering, Materials Engineering, Materials Science +12