Dennis G. Hanken

A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

K. Mistry, R. Chau, Changhwan Choi et al. · 2007 · 829 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

C. Auth, C. Allen, A. Blattner et al. · 2012 · 758 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 10nm high performance and low-power CMOS technology featuring 3^rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate and cobalt local interconnects

C. Auth, A. Aliyarukunju, M. Asoro et al. · 2017 · 369 citations

Engineering, Computer Engineering, Electrical Engineering +17

Optical second-harmonic generation measurements of molecular adsorption and orientation at the liquid/liquid electrochemical interface

Roberta R. Naujok, Daniel A. Higgins, Dennis G. Hanken et al. · Journal of the Chemical Society Faraday Transactions · 1995 · 88 citations

Natural Sciences, Chemistry, Physics +17