Tatsuya Toda

Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor

Tatsuya Toda, Deapeng Wang, Jingxin Jiang et al. · IEEE Transactions on Electron Devices · 2014 · 101 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

ZnO glass-ceramics: An alternative way to produce semiconductor materials

Hirokazu Masai, Tatsuya Toda, Takahiro Ueno et al. · Applied Physics Letters · 2009 · 47 citations

Optical Materials, Engineering, Luminescent Glass +18

Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

Mamoru Furuta, Toshiyuki Kawaharamura, Depang Wang et al. · IEEE Electron Device Letters · 2012 · 46 citations

Electrical Engineering, Thin Film Physics, Thin-film Transistor +15

Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress

Jingxin Jiang, Tatsuya Toda, Mai Phi Hung et al. · Applied Physics Express · 2014 · 44 citations

Thin-film Transistor, Engineering, Fluorine Diffusion +16

High-Performance Top-Gate and Self-Aligned In–Ga–Zn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C

Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari et al. · IEEE Electron Device Letters · 2016 · 29 citations

Engineering, Organic Electronics, Thin Film Process Technology +16