Anyan Du

Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Xiaogen Yin, Yongkui Zhang, Huilong Zhu et al. · IEEE Electron Device Letters · 2019 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors

Junjie Li, Junjie Li, Yongliang Li et al. · Nanomaterials · 2020 · 44 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure

Jeffrey Lam, Maggie Yamin Huang, Tsu Hau Ng et al. · Applied Physics Letters · 2013 · 35 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones

Ming Lin, Kian Ping Loh, Chris Boothroyd et al. · Applied Physics Letters · 2004 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +17

Vertical Sandwich GAA FETs With Self-Aligned High-<i>k</i> Metal Gate Made by Quasi Atomic Layer Etching Process

Yongkui Zhang, Xuezheng Ai, Xiaogen Yin et al. · IEEE Transactions on Electron Devices · 2021 · 30 citations

Engineering, Electrical Engineering, Materials Science +16