Jeffrey Lam

Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure

Jeffrey Lam, Maggie Yamin Huang, Tsu Hau Ng et al. · Applied Physics Letters · 2013 · 34 citations · Full text

Engineering, Nanostructure Alteration, Ultra-low-k Dielectric Degradation +18

22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity

K. Lee, K. Yamane, S. M. Noh et al. · 2018 · 34 citations

Magnetism, Electrical Engineering, Enhanced Magnetic Immunity +15

In-Depth Electrical Analysis to Reveal the Failure Mechanisms With Nanoprobing

S.L. Toh, P.K. Tan, Y.W. Goh et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 26 citations

Transistor Level, Engineering, Mem Testing +22

Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

Dan Dan Wang, Wei Lin Wang, Maggie Yamin Huang et al. · AIP Advances · 2014 · 21 citations · Full text

Ta Ions, Engineering, Complimentary Raman +16

Vibrational spectroscopy of low-k/ultra-low-k dielectric materials on patterned wafers

Jeffrey Lam, Maggie Yamin Huang, Hao Tan et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2011 · 20 citations

Materials Science, Materials Engineering, Ultra-low-k Dielectric Materials +15