22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity

Abstract

We demonstrate a fully functional embedded MRAM (eMRAM) macro integrated into a 22-nm FD-SOI CMOS platform. This macro combined with eFlash-flavor MTJ film stacks shows median-die bit error rate (BER) < 1 ppm after 5× solder reflows. It also meets the automotive grade-1 data retention requirement and shows intrinsic stand-by magnetic immunity of 1.4 kOe (BER criteria = 1 ppm) after 1-hr exposure at 25 °C. The results reveal that eMRAM is capable of serving a broad spectrum of eFlash applications at 22 nm or beyond.