E. Hammerl

A fully planarized 0.25 μm CMOS technology for 256 Mbit DRAM and beyond

G. Bronner, H. Aochi, M. Gall et al. · 2002 · 25 citations

Engineering, Vlsi Design, Emerging Memory Technology +16

Local silicon molecular beam epitaxy with microshadow masks

E. Hammerl, I. Eisele · Applied Physics Letters · 1993 · 23 citations

Materials Science, Materials Engineering, Engineering +15

Silicon Molecular Beam Epitaxy on Hydrogen-Plasma-Cleaned Substrates

W. Hänsch, E. Hammerl, W. Kiunke et al. · Japanese Journal of Applied Physics · 1994 · 16 citations

Engineering, Integrated Circuits, Vacuum Device +16

On the sensitivity of positrons to electric fields and defects in MBE-grown silicon structures

D.T. Britton, P. Willutzki, W. Triftsh�user et al. · Applied Physics A · 1994 · 15 citations

Engineering, Physics, Positron Annihilation Spectroscopy +7

Self-Organizing Growth of Nanometer Mesa Structures on Silicon (100) Substrates

H. Baumgärtner, E. Hammerl, F. Wittmann et al. · Japanese Journal of Applied Physics · 1994 · 15 citations

Engineering, Electron-beam Lithography, Silicon On Insulator +20