C. Charbuillet

A capacitor-less DRAM cell on 75nm gate length, 16nm thin fully depleted SOI device for high density embedded memories

R. Ranica, A. Villaret, C. Fenouillet-Béranger et al. · 2005 · 58 citations

Engineering, Computer Engineering, Electrical Engineering +15

SON (Silicon-On-Nothing) P-MOSFETs with totally silicided (CoSi/sub 2/) polysilicon on 5 nm-thick Si-films: the simplest way to integration of metal gates on thin FD channels

S. Monfray, T. Skotnicki, B. Tavel et al. · 2003 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

High Current Drive in Ultra-Short Impact Ionization MOS (I-MOS) Devices

C. Charbuillet, S. Monfray, Éric Dubois et al. · 2006 · 18 citations

Engineering, Electrical Engineering, Microelectronics +16

Ultra-Thin Fully Depleted SOI Devices with Thin BOX, Ground Plane and Strained Liner Booster

C. Gallon, A. Vandooren, F. Payet et al. · Proceedings - IEEE International SOI Conference/Proceedings · 2006 · 17 citations

Engineering, Electrical Engineering, Microelectronics +12

Technology-circuit convergence for full-SOC platform in 28 nm and beyond

F. Arnaud, Steve Colquhoun, A.L. Mareau et al. · 2011 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17