H. Namita

Bulk GaN crystals grown by HVPE

Kenji Fujito, Shuichi Kubo, Hirobumi Nagaoka et al. · Journal of Crystal Growth · 2009 · 356 citations

Engineering, Materials Engineering, Materials Science +12

XAFS and TOF–SIMS analysis of SEI layers on electrodes

Hitoshi Ota, Toshio Akai, H. Namita et al. · Journal of Power Sources · 2003 · 181 citations

Natural Sciences, Materials Engineering, Materials Science +14

High‐quality nonpolar <i>m</i> ‐plane GaN substrates grown by HVPE

Kenji Fujito, Kazumasa Kiyomi, Tae Mochizuki et al. · physica status solidi (a) · 2008 · 160 citations

Engineering, Materials Engineering, Materials Science +17

Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

Jun Suda, Kazuki Yamaji, Yuichirou Hayashi et al. · Applied Physics Express · 2010 · 145 citations

Engineering, Electrical Engineering, Materials Science +17

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

Shigefusa F. Chichibu, K. Hazu, Y. Ishikawa et al. · Journal of Applied Physics · 2012 · 78 citations

Engineering, Materials Engineering, Materials Science +17