K. Hazu

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

Shigefusa F. Chichibu, Hideto Miyake, Y. Ishikawa et al. · Journal of Applied Physics · 2013 · 108 citations

Aluminium Nitride, Engineering, Optoelectronic Devices +20

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

Shigefusa F. Chichibu, K. Hazu, Y. Ishikawa et al. · Journal of Applied Physics · 2012 · 76 citations

Nonpolar Freestanding Gan, Wide-bandgap Semiconductor, Electrical Engineering +12

Ammonothermal Crystal Growth of GaN Using an NH₄F Mineralizer

Quanxi Bao, Makoto Saitô, K. Hazu et al. · Crystal Growth & Design · 2013 · 58 citations

Materials Science, Ammonothermal Crystal Growth, Engineering +9

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

Shigefusa F. Chichibu, Takeyoshi Onuma, K. Hazu et al. · Applied Physics Letters · 2010 · 39 citations

Aluminium Nitride, Point Defects, Engineering +16

Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer

Daisuke Tomida, Yuji Kagamitani, Q. Bao et al. · Journal of Crystal Growth · 2012 · 38 citations

Materials Science, Engineering, Crystal Growth Technology +6