W. Molzer

SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay

T.F. Meister, H. Schäfer, M. Franosch et al. · 2002 · 69 citations

Engineering, Electrical Engineering, Microelectronics +16

Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines

Mayank Shrivastava, R. R. Mehta, Maryam Shojaei Baghini et al. · IEEE Transactions on Electron Devices · 2011 · 47 citations

Engineering, Computer Engineering, Electrical Engineering +17

Evaluation of process parameter space of bulk FinFETs using 3D TCAD

Muhammad Nawaz, Stefan Decker, Luis-Felipe Giles et al. · Microelectronic Engineering · 2008 · 20 citations

Engineering, Computer Engineering, Microelectronics +9

Self Heating Simulation of Multi-Gate FETs

W. Molzer, T. Schulz, W. Xiong et al. · Proceedings of the European Solid State Device Research Conference · 2006 · 18 citations

Engineering, Electrical Engineering, Materials Science +17

On the device design assessment of multigate FETs (MuGFETs) using full process and device simulation with 3D TCAD

Muhammad Nawaz, W. Molzer, Stefan Decker et al. · Microelectronics Journal · 2007 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +17