Yasuhiro Ebihara

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

Katsumasa Kamiya, Yasuhiro Ebihara, Kenji Shiraishi et al. · Applied Physics Letters · 2011 · 45 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +18

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

Aiko Ichimura, Yasuhiro Ebihara, Shuhei Mitani et al. · Materials science forum · 2018 · 25 citations

Electrical Engineering, 4H-sic Trench Mosfets, Engineering +11

Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd

Yasuhiro Ebihara, Aiko Ichimura, Shuhei Mitani et al. · 2018 · 22 citations

Electrical Engineering, 4H-sic Trench Mosfets, Engineering +9

Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide

Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato et al. · Applied Physics Letters · 2012 · 21 citations · Full text

Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

Yasuhiro Ebihara, Junichi Uehara, Aiko Ichimura et al. · 2019 · 21 citations

Bipolar Degradation, Semiconductor Technology, Electrical Engineering +13