Kenta Chokawa

A New-Type of Defect Generation at a 4H-SiC/SiO<sub>2 </sub>Interface by Oxidation Induced Compressive Strain

Kenta Chokawa, Shigenori Kato, Katsumasa Kamaiya et al. · Materials science forum · 2013 · 33 citations

Materials Engineering, Materials Science, Defect Generation +9

Intrinsic origin of negative fixed charge in wet oxidation for silicon carbide

Yasuhiro Ebihara, Kenta Chokawa, Shigenori Kato et al. · Applied Physics Letters · 2012 · 21 citations · Full text

Thermodynamic considerations of the vapor phase reactions in III–nitride metal organic vapor phase epitaxy

Kazuki Sekiguchi, Hiroki Shirakawa, Kenta Chokawa et al. · Japanese Journal of Applied Physics · 2017 · 21 citations

Thermodynamic Considerations, Aluminium Nitride, Gan Movpe +13

Effect of incorporation of nitrogen atoms in Al₂O₃gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Eiji Kojima, Kenta Chokawa, Hiroki Shirakawa et al. · Applied Physics Express · 2018 · 20 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

Investigation of the GaN/Al₂O₃ Interface by First Principles Calculations

Kenta Chokawa, Eiji Kojima, Masaaki Araidai et al. · physica status solidi (b) · 2017 · 20 citations

Wide-bandgap Semiconductor, Engineering, First Principles Calculations +17