Michele Goano

Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

M. Farahmand, C. Garetto, E. Bellotti et al. · IEEE Transactions on Electron Devices · 2001 · 473 citations

Materials Science, Electron Transport Physics, Electrical Engineering +14

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

G. Verzellesi, Davide Saguatti, Matteo Meneghini et al. · Journal of Applied Physics · 2013 · 404 citations · Full text

Wide-bandgap Semiconductor, Engineering, Physical Mechanisms +17

Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN

Michele Goano, E. Bellotti, Enrico Ghillino et al. · Journal of Applied Physics · 2000 · 124 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes

M. Mandurrino, G. Verzellesi, Michele Goano et al. · physica status solidi (a) · 2015 · 95 citations · Full text

Wide-bandgap Semiconductor, Point Defects, Engineering +16

A numerical study of Auger recombination in bulk InGaN

Francesco Bertazzi, Michele Goano, E. Bellotti · Applied Physics Letters · 2010 · 89 citations

Wide-bandgap Semiconductor, Engineering, Direct Interband +17