Michele Goano - Concepedia

Author

Michele Goano

Polytechnic University of Turin ORCID

Also Known As

Goano, M., Goano, Michele, M Goano, M. Goano, Michele GOANO, Michele Goano

221

Publications

3.7K

Citations

H-Index

Concepts

All Affiliations

Polytechnic University of Turin Institute of Electronics, Computer and Telecommunication Engineering Boston University University of Padua AIM Infrarot-Module (Germany)

About

Michele Goano is an author at Polytechnic University of Turin specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	68	3.2K
2	Applied Physics	30	60	2.9K
3	Natural Sciences	11	11	496
4	Computer Engineering	6	6	153
5	Chemistry	1	1	11

Michele Goano

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries M. Farahmand, C. Garetto, E. Bellotti, IEEE Transactions on Electron Devices Materials ScienceElectron Transport PhysicsElectrical EngineeringAluminium NitrideEngineering	2001	473
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G. Verzellesi, Davide Saguatti, Matteo Meneghini, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringPhysical MechanismsQuantum EngineeringNanoelectronics	2013	404
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN Michele Goano, E. Bellotti, Enrico Ghillino, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	2000	124
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes M. Mandurrino, G. Verzellesi, Michele Goano, physica status solidi (a) Wide-bandgap SemiconductorPoint DefectsEngineeringOptoelectronic DevicesCurrent Flow	2015	95
A numerical study of Auger recombination in bulk InGaN Francesco Bertazzi, Michele Goano, E. Bellotti Applied Physics Letters Wide-bandgap SemiconductorEngineeringDirect InterbandNanoelectronicsNumerical Simulation	2010	89
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN Michele Goano, E. Bellotti, Enrico Ghillino, Journal of Applied Physics Aluminium NitrideEngineeringLinear InterpolationIi-vi SemiconductorMaterials Engineering	2000	87
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and <i>ab initio</i> calculations Michele Goano, Francesco Bertazzi, Michele Penna, Journal of Applied Physics SemiconductorsMaterials ScienceNonlocal PseudopotentialIi-vi SemiconductorEngineering	2007	83
Numerical analysis of indirect Auger transitions in InGaN Francesco Bertazzi, Michele Goano, E. Bellotti Applied Physics Letters Numerical AnalysisMaterials ScienceIi-vi SemiconductorPhotoluminescenceEngineering	2012	79
Alloy scattering in AlGaN and InGaN: A numerical study E. Bellotti, Francesco Bertazzi, Michele Goano Journal of Applied Physics Materials EngineeringMaterials ScienceAlloy ScatteringAluminium NitrideEngineering	2007	72
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives Matteo Meneghini, Carlo De Santi, Alberto Tibaldi, Journal of Applied Physics EngineeringCommercial LedsPhysical OriginLuminescence PropertyThermal Droop	2020	70

Page 1