Maher Tahhan - Concepedia

Author

Maher Tahhan

University of California, Santa Barbara ORCID

Also Known As

M. Tahhan, Maher B. Tahhan, Maher Tahhan

Publications

238

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara RTX (United States)Pennsylvania State University United States Naval Research Laboratory University of Padua

About

Maher Tahhan is an author at University of California, Santa Barbara specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	172
2	Applied Physics	7	7	172
3	Electrical Engineering	6	6	144
4	Materials Engineering	2	2	43
5	Chemistry	1	1	15

Maher Tahhan

Publications

223

Citations

H-Index

Page 1

	Year	Citations
Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors Maher Tahhan, John Logan, Matthew T. Hardy, IEEE Transactions on Electron Devices Passivation DesignWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2022	41
N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates Elaheh Ahmadi, Feng Wu, Haoran Li, Semiconductor Science and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2015	29
Suppression of Mg propagation into subsequent layers grown by MOCVD Anchal Agarwal, Maher Tahhan, Tom Mates, Journal of Applied Physics Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEngineeringMg Propagation	2017	28
Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Silvia H. Chan, Maher Tahhan, Xiang Liu, Japanese Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	2016	21
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Maher Tahhan, Joseph Nedy, Silvia H. Chan, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceElectrical EngineeringEngineeringLow DamageSurface Science	2016	19
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces Silvia H. Chan, S. Keller, Maher Tahhan, Semiconductor Science and Technology Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2016	19
<i>In situ</i> metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge Xia-Ji Liu, Justin J. Kim, Donald J. Suntrup, Applied Physics Letters Aluminium NitrideN-face GanEngineeringChemistryAl2o3 Dielectrics	2014	15
A Comparative Analysis of Electrical and Optical Thermometry Techniques for AlGaN/GaN HEMTs Seokjun Kim, Daniel Shoemaker, Anwarul Karim, IEEE Transactions on Electron Devices	2024	15
ScAlN-GaN Transistor Technology for Millimeter-wave Ultra-high Power and Efficient MMICs Eduardo M. Chumbes, John Logan, B. D. Schultz, 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022	2022	14
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices Davide Bisi, Silvia H. Chan, Maher Tahhan,	2016	11

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