6
Publications
170
Citations
6
H-Index
1994
Active since
Affiliations
H. Wurzer is an author at Universität der Bundeswehr München specializing in engineering, electrical engineering, and applied physics.
Top concepts
EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsNanoelectronicsPhysicsHydrogenSemiconductorsMaterial ScienceElectronic Devices
Publications per year
1994–2003
6
6
Influence of soft breakdown on NMOSFET device characteristics
Influence of gate oxide breakdown on MOSFET device operation
T. Pompl, H. Wurzer, M. Kerber et al. · Microelectronics Reliability · 2000 · 23 citations
Electrical Engineering, Engineering, Mosfet Device Operation +4
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1–5 of 6