Shuhei Nakata

4H-SiC Trench MOSFET with Bottom Oxide Protection

Yasuhiro Kagawa, Nobuo Fujiwara, Katsutoshi Sugawara et al. · Materials science forum · 2014 · 98 citations

Electrical Engineering, Engineering, Switching Loss +10

Synthesis and Characterization of a New Two-Dimensional Aluminophosphate Layer and Structural Diversity in Anionic Aluminophosphates with Al₂P₃O₁₂³^- Stoichiometry

Jie‐Hui Yu, K. Sugiyama, K. Hiraga et al. · Chemistry of Materials · 1998 · 74 citations

Materials Science, Inorganic Chemistry, Crystal Structure +12

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

K. Hamada, Hiroshi Watanabe, Shuhei Nakata et al. · Japanese Journal of Applied Physics · 2015 · 73 citations

6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module

Koutarou Kawahara, Shiro Hino, Koji Sadamatsu et al. · 2017 · 71 citations

Electrical Engineering, Engineering, Power Device +10

Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress

Kazuya Konishi, S. Yamamoto, Shuhei Nakata et al. · Journal of Applied Physics · 2013 · 66 citations · Full text

Fault Expansion, Engineering, Mechanical Engineering +16