T. Liu - Concepedia

Author

T. Liu

HRL Laboratories (United States)

Also Known As

T. Liu, Tz-Yu Liu

Publications

312

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)

About

T. Liu is an author at HRL Laboratories (United States) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	255
2	Electrical Engineering	10	10	255
3	Applied Physics	9	9	234
4	Computer Engineering	1	1	41
5	Materials Science	1	1	22

T. Liu

Publications

265

Citations

H-Index

Page 1

	Year	Citations
On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness Gaudenzio Meneghesso, A. Neviani, R. Oesterholt, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringThreshold EnergyElectronic Engineering	1999	81
An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs W.E. Stanchina, J.F. Jensen, R.H. Walden, EngineeringHbt Ic TechnologyAnalog DesignHigh-speed DigitalIntegrated Circuits	2002	41
InP-based HEMT's with Al/sub 0.48/In/sub 0.52/As/sub x/P/sub 1-x/ Schottky layers L.M. Jelloian, M. Matloubian, T. Liu, IEEE Electron Device Letters Materials ScienceAluminium NitrideElectrical EngineeringEngineeringDb Gain	1994	22
K-band GaInAs/InP channel power HEMTs M. Matloubian, T. Liu, L.M. Jelloian, Electronics Letters Electrical EngineeringEngineeringHigh Voltage EngineeringPower DevicePower Performance	1995	22
A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier S. E. Rosenbaum, L.M. Jelloian, L.E. Larson, IEEE Microwave and Guided Wave Letters Microwave CircuitsElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device	1993	21
Manufacturability of 0.1- mu m millimeterwave low-noise InP HEMTs Lan N. Nguyen, M.J. Delaney, M. Lui, Typical PerformanceElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor	2002	21
Microwave power performance of InP-based double heterojunction bipolar transistors for C- and X-band applications M. Hafizi, P.A. Macdonald, T. Liu, Microwave Power PerformanceEngineeringEnergy EfficiencyMicrowave TransmissionPower Electronics	2002	13
36 GHz Static Digital Frequency Dividers in AlInAs-Gainas Hbt Technology J.F. Jensen, W.E. Stanchina, Robert A. Metzger, EngineeringRadio FrequencySummary FormSemiconductor DeviceElectromagnetic Compatibility	2005	12
High-performance microwave power AlInAs/GaInAs/InP double heterojunction bipolar transistors with compositionally graded base-collector junction M. Hafizi, T. Liu, P.A. Macdonald, Wide-bandgap SemiconductorElectrical EngineeringCollector-emitter Breakdown VoltageEngineeringRf Semiconductor	2002	12
GaInAs/InP composite channel HEMT's M. Matloubian, L.M. Jelloian, M. Lui, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringChannel ThicknessGainas/inp Composite Channels	1993	10

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