Electronics Letters · 1995 · 22 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsHigh-frequency ElectronicsPower Added EfficiencyPower EfficiencyPower Electronics DevicesPower OutputRadio Frequency Power Amplifiers
The authors report on the DC and power performance of GaInAs/InP composite channel HEMTs with a 30 Å GaInAs channel. Devices with gate length of 0.15 µm exhibit off-state drain-to-source breakdown voltages of more than 10 V and on-state drain-to-source breakdown voltages of 8 V. Using a 450 µm wide HEMT, an output power of more than 280 mW (0.62 W/mm) has been obtained with power-added efficiency of 46% at 20 GHz.
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Off-state breakdown in InAlAs/InGaAs MODFET's
S.R. Bahl, Jesús A. del Alamo, Jürgen Dickmann et al. · IEEE Transactions on Electron Devices · 1995 · 82 citations