K-band GaInAs/InP channel power HEMTs

Abstract

The authors report on the DC and power performance of GaInAs/InP composite channel HEMTs with a 30 Å GaInAs channel. Devices with gate length of 0.15 µm exhibit off-state drain-to-source breakdown voltages of more than 10 V and on-state drain-to-source breakdown voltages of 8 V. Using a 450 µm wide HEMT, an output power of more than 280 mW (0.62 W/mm) has been obtained with power-added efficiency of 46% at 20 GHz.