Yingxin Qiu

A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET

Yingxin Qiu, Runsheng Wang, Qianqian Huang et al. · IEEE Transactions on Electron Devices · 2014 · 146 citations

Device Modeling, Electrical Engineering, Engineering +12

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

Qianqian Huang, Ru Huang, Zhan Zhan et al. · 2012 · 127 citations

Striped Gate Configuration, Electrical Engineering, Semiconductor Device +11

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high I<inf>ON</inf>/I<inf>OFF</inf> by gate configuration and barrier modulation

Qianqian Huang, Zhan Zhan, Ru Huang et al. · 2011 · 34 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11

New observations on complex RTN in scaled high-κ/metal-gate MOSFETs — The role of defect coupling under DC/AC condition

Pengpeng Ren, Hao Peng, Changze Liu et al. · 2013 · 21 citations

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Qianqian Huang, Ru Huang, Shaowen Chen et al. · Semiconductor Science and Technology · 2014 · 10 citations