Ru Huang

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

Runsheng Wang, Jing Zhuge, Ru Huang et al. · IEEE Transactions on Electron Devices · 2007 · 100 citations

Device Modeling, Si Nanowire Transistors, Electrical Engineering +14

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high I<inf>ON</inf>/I<inf>OFF</inf> by gate configuration and barrier modulation

Qianqian Huang, Zhan Zhan, Ru Huang et al. · 2011 · 34 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +11

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Runsheng Wang, Zixuan Sun, Yue‐Yang Liu et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 34 citations

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Jing Zhuge, Runsheng Wang, Ru Huang et al. · 2009 · 24 citations

Engineering, Vlsi Design, Semiconductor Device +16

New Observations on the Hot Carrier and NBTI Reliability of Silicon Nanowire Transistors

Runsheng Wang, Ru Huang, Dong‐Won Kim et al. · 2007 · 23 citations

Hot Carrier Injection, Hot Carrier, Electrical Engineering +15