Variability-and reliability-aware design for 16/14nm and beyond technology

Ru Huang, Xiaobo Jiang, Shuren Guo, +5

ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability +13

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf_0.5Zr_0.5O₂ Thin Films

Xuepei Wang, Yichen Wen, Maokun Wu, +11

ACS Applied Materials & Interfaces

Towards reliability-aware circuit design in nanoscale FinFET technology: — New-generation aging model and circuit reliability simulator

Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, +9

2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)

EngineeringFinfet TechnologyComputer ArchitectureCadence Reliability SimulatorNew Compact Transistor +15

Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

Xuepei Wang, Maokun Wu, Boyao Cui, +12

IEEE Electron Device Letters

Oxide HeterostructuresMaterials ScienceMaterials EngineeringElectrical EngineeringEngineering +12

New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations

Jibin Zou, Runsheng Wang, Nanbo Gong, +12

EngineeringAc Rtn StatisticsAc RtnNew InsightsIntegrated Circuits +15

Back-End-of-Line Compatible HfO₂/ZrO₂ Superlattice Ferroelectric Capacitor With High Endurance and Remnant Polarization

Boyao Cui, Xuepei Wang, Yuchun Li, +11

IEEE Electron Device Letters

EngineeringSolid-state ChemistryChemistryPhase Change MemoryOxygen Vacancy +16

New observations on complex RTN in scaled high-κ/metal-gate MOSFETs — The role of defect coupling under DC/AC condition

Pengpeng Ren, Hao Peng, Changze Liu, +17

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Yongkang Xue, Pengpeng Ren, Junjie Wu, +16

IEEE Transactions on Electron Devices

EngineeringHk LayerPhysical OriginChemistryDefect Tolerance +19

Understanding charge traps for optimizing Si-passivated Ge nMOSFETs

Pengpeng Ren, Rui Gao, Zhigang Ji, +18

SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +12

Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings

Zhuoqing Yu, Runsheng Wang, Hao Peng, +3

Device ModelingElectrical EngineeringEngineeringHot Carrier DegradationPhysics +13