J. Piscator

Interface Defects in HfO[sub 2], LaSiO[sub x], and Gd[sub 2]O[sub 3] High-k/Metal–Gate Structures on Silicon

Paul K. Hurley, K. Cherkaoui, Eileen O’Connor et al. · Journal of The Electrochemical Society · 2007 · 50 citations

Engineering, Integrated Circuits, Silicon On Insulator +17

Electron capture cross sections of InAs∕GaAs quantum dots

Olof Engström, M. Kaniewska, Yifeng Fu et al. · Applied Physics Letters · 2004 · 36 citations

Categoryquantum Electronics, Engineering, Electron Diffraction +16

High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

Bahman Raeissi, J. Piscator, Olof Engström et al. · Solid-State Electronics · 2008 · 35 citations

Electrical Engineering, Engineering, Capacitance Frequency Spectroscopy +5

Gd silicate: A high-k dielectric compatible with high temperature annealing

H.D.B. Gottlob, Andrea Stefani, M. Schmidt et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 25 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems

J. Piscator, Bahman Raeissi, O. Engström · Journal of Applied Physics · 2009 · 24 citations

Device Modeling, Conductance Dispersion Curves, Electrical Engineering +14