Concepedia

M. Kaniewska

MK

11

Publications

240

Citations

11

H-Index

1985

Active since

Affiliations

Institute of Electron Technology(Current)

Chalmers University of Technology

M. Kaniewska is an author at Institute of Electron Technology specializing in engineering, applied physics, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsQuantum DotsElectrical EngineeringCondensed Matter PhysicsOptoelectronicsQuantum ScienceAtomic PhysicsSemiconductors

Publications per year

1985–2008

11

Publications

11

Electron capture cross sections of InAs∕GaAs quantum dots

Olof Engström, M. Kaniewska, Yifeng Fu et al. · Applied Physics Letters · 2004 · 36 citations

Categoryquantum Electronics, Engineering, Electron Diffraction +16

Lattice dilation by free electrons in heavily doped GaAs:Si

M. Leszczyński, J. Bąk‐Misiuk, J. Z. Domagała et al. · Applied Physics Letters · 1995 · 31 citations

Semiconductors, Semiconductor Technology, Epitaxial Growth +13

Deep levels induced by InAs/GaAs quantum dots

M. Kaniewska, Olof Engström, A. Barcz et al. · Materials Science and Engineering C · 2005 · 30 citations

Engineering, Deep Levels, Physics +4

Deep levels associated with oxidation induced stacking faults in <i>n</i>-type silicon

J. Kaniewski, M. Kaniewska, А. R. Peaker · Applied Physics Letters · 1992 · 26 citations

Study of non-exponential electron capture by the main electron trap in GaAs0.62P0.38

M. Kaniewska, J. Kaniewski · Solid State Communications · 1985 · 22 citations

Quantum Science, Non-exponential Electron Capture, Engineering +7

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