Jingan Zhou

Demonstration of mechanically exfoliated <i>β</i>-Ga2O3/GaN p-n heterojunction

Jossue Montes, Chen Yang, Houqiang Fu et al. · Applied Physics Letters · 2019 · 85 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Kai Fu, Houqiang Fu, Xuanqi Huang et al. · IEEE Journal of the Electron Devices Society · 2020 · 81 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

Houqiang Fu, Kai Fu, Shanthan Reddy Alugubelli et al. · IEEE Electron Device Letters · 2019 · 72 citations

Engineering, Electrical Engineering, Physics +17

Dependence of leakage current on dislocations in GaN-based light-emitting diodes

D. S. Li, H. Chen, Haiming Yu et al. · Journal of Applied Physics · 2004 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

Kai Fu, Houqiang Fu, Xuanqi Huang et al. · IEEE Electron Device Letters · 2019 · 64 citations

Engineering, Electrical Engineering, Materials Science +17