S. Pan

Data retention behavior of a SONOS type two-bit storage flash memory cell

Wen-Jer Tsai, N. K. Zous, C.J. Liu et al. · 2002 · 91 citations

Non-volatile Memory, Electrical Engineering, Data Retention Loss +15

Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

Wen-Jer Tsai, S.H. Gu, N. K. Zous et al. · 2003 · 41 citations

Retention Loss, Electrical Engineering, Data Retention Loss +13

Reliability models of data retention and read-disturb in 2-bit nitride storage flash memory cells

T. Wang, Wen-Jer Tsai, S.H. Gu et al. · 2004 · 41 citations

Reliability Models, Non-volatile Memory, Engineering +17

Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Chih‐Chia Cheng, Jing-Wei Lin, T. Wang et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 34 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Modeling for the 2nd-Bit Effect of a Nitride-Based Trapping Storage Flash EEPROM Cell Under Two-Bit Operation

Yao‐Wen Chang, Tien‐Chang Lu, S. Pan et al. · IEEE Electron Device Letters · 2004 · 33 citations

Hardware Security, 2Nd-bit Effect, Electrical Engineering +14