High endurance of 10 ¹¹ cycles is demonstrated in ~9–10-nm stoichiometric Hafnium Zirconate (HZO) metal–ferroelectric–metal (MFM) capacitors deposited using Cl precursors with La and Y dopants. La doping is shown to offer higher remnant polarization than Y. Investigation of doped layers with asymmetric polarization versus electric field (

${P}$

–

${E}$

) measurements and unipolar fatigue cycles suggests that in the pristine state, the HZO is comprised of ferroelectric domains with internal built-in electric field-induced pinned coercive field (

${E}_{c}$

). Doping is shown to increase the pinning effect and two distinct groups of ferroelectric domains emerge, which is antialigned at zero applied electric field (

${E}$

). The antiferroelectric-like (pinched

${P}$

–

${E}$

loop) behavior is therefore attributed to internal built-in

${E}$

-induced pinning of the domains during growth and/or annealing steps. The initial wake-up is attributed to gradual depinning of the domains with bipolar electric pulses. Suppression of monoclinic phase was observed in doped layers that survive 10 ¹¹ cycles. The wake-up is shown to be dependent on total duration and magnitude of bipolar electric pulses. Precycling scheme is demonstrated for stable operation at a lower field.

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2	Applied Physics	2	2	59
3	Chemistry	2	2	28
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5	Electrical Engineering	1	1	45

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