A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

Nicholas D. Rizzo, D. Houssameddine, J. Janesky, +12

IEEE Transactions on Magnetics

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureMagnetic Materials +24

CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications

D. Shum, D. Houssameddine, S. T. Woo, +35

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +16

Technology for reliable spin-torque MRAM products

J. M. Slaughter, K. Nagel, R. Whig, +24

MagnetismSpintronicsElectrical EngineeringEngineeringSpin-orbit Torque +12

High density ST-MRAM technology (Invited)

J. M. Slaughter, Nicholas D. Rizzo, J. Janesky, +10

Materials EngineeringNon-volatile MemoryElectrical EngineeringMemory ArchitectureEngineering +11

High speed toggle MRAM with mgO-based tunnel junctions

J. M. Slaughter, R. W. Dave, M. Durlam, +8

Mgo-based Tunnel JunctionsSpintronicsMagnetismElectrical EngineeringNew Material +12

A 0.18 μm 4Mb toggling MRAM

M. Durlam, D. Addie, Johan Åkerman, +28

Toggling MramMagnetismElectrical EngineeringSpintronicsEngineering +10

High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications

S. Ikegawa, K. Nagel, F. B. Mancoff, +13

2022 International Electron Devices Meeting (IEDM)

Commercialization of 1Gb Standalone Spin-Transfer Torque MRAM

J. J. Sun, M. DeHerrera, Brian Hughes, +8

EngineeringEmerging Memory TechnologyMagnetic ResonanceCurrent Pulse WidthSpintronic Material +14

Device performance in a fully functional 800MHz DDR3 spin torque magnetic random access memory

J. Janesky, Nicholas D. Rizzo, D. Houssameddine, +15

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +23

90nm toggle MRAM array with 0.29μm/sup 2/ cells

M. Durlam, T. André, P. Brown, +29

SpintronicsElectrical EngineeringMagnetismEngineeringNon-volatile Memory +11