R.W. Michelmann

Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1−xNx layers

H. Ch. Alt, A. Yu. Egorov, H. Riechert et al. · Applied Physics Letters · 2000 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

Excitation functions for the reactions 10B(d, n)11C and 12C(d, n)13N for charged particle activation analysis

R.W. Michelmann, John Krauskopf, J.D. Meyer · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1990 · 38 citations

Natural Sciences, Physics, Nuclear Chemistry +9

Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)

A. Markwitz, H. Baumann, E. F. Krimmel et al. · Applied Physics A · 1994 · 28 citations

Engineering, Materials Engineering, Materials Science +17

Boron detection using the nuclear reaction 11B(p, α)2α

Maike Vollmer, J.D. Meyer, R.W. Michelmann · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 25 citations

Natural Sciences, Nuclear Engineering, Physics +12

Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy

H. Ch. Alt, A. Yu. Egorov, H. Riechert et al. · Physica B Condensed Matter · 2001 · 24 citations

Natural Sciences, Materials Science, Physics +16