N. L. Dias

A 14 nm SoC platform technology featuring 2<sup>nd</sup> generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um<sup>2</sup> SRAM cells, optimized for low power, high performance and high density SoC products

C.-H. Jan, F. Al-Amoody, H.-Y. Chang et al. · 2015 · 48 citations

Engineering, Computer Engineering, Electrical Engineering +16

Narrow Linewidth Surface-Etched DBR Lasers: Fundamental Design Aspects and Applications

Joseph W. Zimmerman, R. K. Price, U. K. Reddy et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2013 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms

C. Prasad, K. W. Park, Manisha Chahal et al. · 2016 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +17

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

Varun B. Verma, Martin J. Stevens, Kevin L. Silverman et al. · Optics Express · 2011 · 19 citations · Full text

Natural Sciences, Materials Science, Physics +16

Patterned Quantum Dot Molecule Laser Fabricated by Electron Beam Lithography and Wet Chemical Etching

Varun B. Verma, U. K. Reddy, N. L. Dias et al. · IEEE Journal of Quantum Electronics · 2010 · 18 citations

Engineering, Electrical Engineering, Materials Science +17