Concepedia

M. Lamont Schnoes

ML

12

Publications

734

Citations

11

H-Index

1989

Active since

Affiliations

AT&T (United States)(Current)

Nokia (United States)

University of Florida

M. Lamont Schnoes is an author at AT&T (United States) specializing in applied physics, engineering, and electrical engineering.

Top concepts

EngineeringApplied PhysicsElectrical EngineeringSemiconductorsOptoelectronicsMaterial ScienceOptoelectronic DevicesOptoelectronic MaterialsOptical PropertiesCrystalline Defects

Publications per year

1989–1997

12

Publications

12

Ga2O3 films for electronic and optoelectronic applications

M. Passlack, E. Fred Schubert, W. S. Hobson et al. · Journal of Applied Physics · 1995 · 432 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs

R. F. Kopf, Michael H. Herman, M. Lamont Schnoes et al. · Journal of Applied Physics · 1992 · 127 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +16

Band offset determination in parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs

R. F. Kopf, Michael H. Herman, M. Lamont Schnoes et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1993 · 25 citations

Semiconductors, Electrical Engineering, Engineering +12

Photoluminescence and x-ray photoelectron spectroscopy study of S-passivated InGaAs(001)

Lutz Geelhaar, R. A. Bartynski, F. Ren et al. · Journal of Applied Physics · 1996 · 25 citations

Pl Yield, H2s Passivation Treatment, Engineering +14

High-sensitivity electronic Raman spectroscopy for acceptor determination in gallium arsenide

T.D. Harris, M. Lamont Schnoes, L. Seibles · Analytical Chemistry · 1989 · 19 citations

Engineering, Donut Icon, Optical Properties +10

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