Liyang Zhu

Carrier Transport Mechanisms Underlying the Bidirectional <inline-formula> <tex-math notation="LaTeX">${V}_{\mathrm{{TH}}}$ </tex-math> </inline-formula> Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Yuanyuan Shi, Qi Zhou, Cheng Qian et al. · IEEE Transactions on Electron Devices · 2018 · 77 citations

Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection

Yuanyuan Shi, Qi Zhou, Cheng Qian et al. · 2018 · 54 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Yuanyuan Shi, Qi Zhou, Anbang Zhang et al. · Nanoscale Research Letters · 2017 · 25 citations · Full text

Method of Site Selection and Capacity Setting for Battery Energy Storage System in Distribution Networks with Renewable Energy Sources

Simin Peng, Liyang Zhu, Zhenlan Dou et al. · Energies · 2023 · 17 citations · Full text

Engineering, Energy Distribution, Reasonable Allocation +18

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and <i>In Situ</i> Si₃N₄-Cap Passivation

Liyang Zhu, Qi Zhou, Yang Xiu et al. · IEEE Transactions on Electron Devices · 2020 · 15 citations

Materials Engineering, Semiconductors, Electrical Engineering +12