Vladimir Faifer

Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current

Gregory Brown, Vladimir Faifer, A.O. Pudov et al. · Applied Physics Letters · 2010 · 73 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles

Trudo Clarysse, Alain Moussa, Frederik Leys et al. · MRS Proceedings · 2006 · 28 citations

Engineering, Resistor, Nondestructive Testing +9

Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions

Vladimir Faifer, Michael Current, Theodore M. Wong et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 27 citations

Engineering, Integrated Circuits, Sub-junction Doping +16

Characterization of ultrashallow junctions using frequency-dependent junction photovoltage and its lateral attenuation

Vladimir Faifer, Michael Current, D.K. Schroder · Applied Physics Letters · 2006 · 17 citations

Junction Photovoltages, Engineering, Power Electronics +17

Quantitative imaging of electronic nonuniformities in Cu(In,Ga)Se2 solar cells

Gregory Brown, A.O. Pudov, Ben Cardozo et al. · Journal of Applied Physics · 2010 · 15 citations

Semiconductors, Ii-vi Semiconductor, Electrical Engineering +15